型番 | FDM3622 |
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メーカー | FAIRCHILD |
データシート | ![]() |
Avalanche Energy Rating (Eas) | 190 mJ |
Case Connection | DRAIN |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (Abs) (ID) | 3.8 A |
Drain Current-Max (ID) | 4.4 A |
Drain-source On Resistance-Max | 0.06 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | S-PDSO-F5 |
JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 5 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 Cel |
Operating Temperature-Min | -55 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | SQUARE |
Package Style | SMALL OUTLINE Meter |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 0.0021 W |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | YES |
Terminal Finish | MATTE TIN |
Terminal Form | FLAT |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
会社名称 | Fairchild Semiconductor Corporation |
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設立 | 1957 |
所在地 | 3030 Orchard Parkway San Jose, CA 95134 United States |
URL | http://www.fairchildsemi.com/ |
FDM3622 - FAIRCHILD の商品詳細ページです。