FDM2509NZ データシート Fairchild

FDM2509NZ - FAIRCHILD の商品詳細ページです。

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FDM2509NZ の詳細情報

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型番FDM2509NZ
メーカーFAIRCHILD
データシートProduct_list_pdf
Additional Feature ESD PROTECTED
Case Connection DRAIN
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (Abs) (ID) 8.7 A
Drain Current-Max (ID) 8.7 A
Drain-source On Resistance-Max 0.018 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N6
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.2 W
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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