FDD8447L Fairchild

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FDD8447L の詳細情報

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型番FDD8447L
メーカーFAIRCHILD
Avalanche Energy Rating (Eas) 40 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (Abs) (ID) 50 A
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.0085 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Length 6.73 mm
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 44 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Reference Standard AEC-Q101
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Width 6.22 mm
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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