FDB6670AL データシート Fairchild

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FDB6670AL の詳細情報

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型番FDB6670AL
メーカーFAIRCHILD
データシートProduct_list_pdf
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 114 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 80 A
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.0065 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 68 W
Pulsed Drain Current-Max (IDM) 240 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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