2N5551TA データシート Fairchild

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2N5551TA の詳細情報

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型番2N5551TA
メーカーFAIRCHILD
データシートProduct_list_pdf
Collector Current-Max (IC) 0.6 A
Collector-base Capacitance-Max 6 pF
Collector-emitter Voltage-Max 160 V
Configuration SINGLE
DC Current Gain-Min (hFE) 30
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL Meter
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.625 W
Power Dissipation-Max (Abs) 0.35 W
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz
VCEsat-Max 0.2 V
会社名称Fairchild Semiconductor Corporation
設立1957
所在地3030 Orchard Parkway San Jose, CA 95134 United States
URLhttp://www.fairchildsemi.com/

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