M12L2561616A-6TG2S Esmt

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M12L2561616A-6TG2S の詳細情報

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型番M12L2561616A-6TG2S
メーカーESMT
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
Length 22.22 mm
Memory Density 268435456 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 16777216 words
Number of Words Code 16M
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 Cel
Operating Temperature-Min 0 Cel
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Refresh Cycles 8192
Reverse Pinout NO
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8
Standby Voltage-Min 3 V
Supply Current-Max 0.08 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.16 mm
会社名称Elite Semiconductor Memory Technology Inc.
設立1998
所在地No.23, Industry E Rd. IV Science-Based Industrial Park,Hsinchu 300, Taiwan, R.O.C.
URLhttp://www.esmt.com.tw

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