M12L2561616A-5TG2S Esmt

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M12L2561616A-5TG2S の詳細情報

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型番M12L2561616A-5TG2S
メーカーESMT
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
Length 22.22 mm
Memory Density 268435456 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 16777216 words
Number of Words Code 16M
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 Cel
Operating Temperature-Min 0 Cel
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE Meter
Refresh Cycles 8192
Reverse Pinout NO
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8
Standby Voltage-Min 3 V
Supply Current-Max 0.085 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm
会社名称Elite Semiconductor Memory Technology Inc.
設立1998
所在地No.23, Industry E Rd. IV Science-Based Industrial Park,Hsinchu 300, Taiwan, R.O.C.
URLhttp://www.esmt.com.tw

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