M12L128168A-7TG Esmt

M12L128168A-7TG - ESMT の商品詳細ページです。

1

29時間34分後 以内に見積もり依頼を頂ければ、
05月21日(火) 9:00 までに見積もり回答いたします。

  • 個
この商品のお問い合わせ

M12L128168A-7TG の詳細情報

  • 仕様・詳細
  • メーカー情報
型番M12L128168A-7TG
メーカーESMT
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Access Time-Max (ns) 5.4
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (MHz) 143
DLA Qualification Not Qualified
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
Length 22.22 mm
Length (mm) 22.22
Memory Density 134217728 bit
Memory Density (bits) 134217728
Memory IC Type SYNCHRONOUS DRAM
Memory Organization 8MX16
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 8388608 words
Number of Words (words) 8388608
Number of Words Code 8M
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 Cel
Operating Temperature-Max (Cel) 70
Operating Temperature-Min 0 Cel
Operating Temperature-Min (Cel) 0
Organization 8MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE Meter
Refresh Cycles 4096
Seated Height-Max (mm) 1.2
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max (A) 0.002
Supply Current-Max (mA) 140
Supply Voltage-Max (V) 3.6
Supply Voltage-Min (V) 3
Supply Voltage-Nom (V) 3.3
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch (mm) 0.8
Terminal Position DUAL
Width (mm) 10.16
会社名称Elite Semiconductor Memory Technology Inc.
設立1998
所在地No.23, Industry E Rd. IV Science-Based Industrial Park,Hsinchu 300, Taiwan, R.O.C.
URLhttp://www.esmt.com.tw

M12L128168A-7TGのレビュー

M12L128168A-7TG のご注文について