EDS1232AASE-75-E Elpida

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EDS1232AASE-75-E の詳細情報

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型番EDS1232AASE-75-E
メーカーELPIDA
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90
JESD-609 Code e1
Length 13 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 4194304 words
Number of Words Code 4M
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 Cel
Operating Temperature-Min 0 Cel
Organization 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Power Supplies 3.3 V
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.14 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001 Amp
Sub Category DRAMs
Supply Current-Max 0.21 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm
会社名称Elpida Memory, Inc.
設立1999
資本金JPY 236.1 billion
所在地2-1, Yaesu 2-chome, Chuo-ku, Tokyo 104-0028 Japan
URLhttp://www.elpida.com/

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