EDS1216AATA-75-E Elpida

EDS1216AATA-75-E - ELPIDA の商品詳細ページです。

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EDS1216AATA-75-E
  • EDS1216AATA-75-E
  • EDS1216AATA-75-E
  • EDS1216AATA-75-E
  • EDS1216AATA-75-E
  • EDS1216AATA-75-E
  • EDS1216AATA-75-E
  • EDS1216AATA-75-E
  • EDS1216AATA-75-E
  • EDS1216AATA-75-E
  • EDS1216AATA-75-E
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EDS1216AATA-75-E の詳細情報

  • 仕様・詳細
  • メーカー情報
型番EDS1216AATA-75-E
メーカーELPIDA
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
JESD-609 Code e6
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 8388608 words
Number of Words Code 8M
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 Cel
Operating Temperature-Min 0 Cel
Organization 8MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE Meter
Power Supplies 3.3 V
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 Amp
Sub Category DRAMs
Supply Current-Max 0.22 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN BISMUTH
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm
会社名称Elpida Memory, Inc.
設立1999
資本金JPY 236.1 billion
所在地2-1, Yaesu 2-chome, Chuo-ku, Tokyo 104-0028 Japan
URLhttp://www.elpida.com/

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