| 型番 | EDE2516ABSE5CE |
|---|---|
| メーカー | ELPIDA |
| データシート | ![]() |
| Access Mode | FOUR BANK PAGE BURST |
| Access Time-Max | 0.5 ns |
| Additional Feature | AUTO/SELF REFRESH |
| Clock Frequency-Max (fCLK) | 266 MHz |
| I/O Type | COMMON |
| Interleaved Burst Length | 4,8 |
| JESD-30 Code | R-PBGA-B84 |
| JESD-609 Code | e1 |
| Length | 13 mm |
| Memory Density | 268435456 bit |
| Memory IC Type | DDR2 DRAM |
| Memory Width | 16 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 84 |
| Number of Words | 16777216 words |
| Number of Words Code | 16M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | 0 Cel |
| Organization | 16MX16 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | TFBGA |
| Package Equivalence Code | BGA84,9X15,32 |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH Meter |
| Power Supplies | 1.8 V |
| Qualification Status | Not Qualified |
| Refresh Cycles | 8192 |
| Seated Height-Max | 1.12 mm |
| Self Refresh | YES |
| Sequential Burst Length | 4,8 |
| Standby Current-Max | 0.006 Amp |
| Sub Category | DRAMs |
| Supply Current-Max | 0.19 mA |
| Supply Voltage-Max (Vsup) | 1.9 V |
| Supply Voltage-Min (Vsup) | 1.7 V |
| Supply Voltage-Nom (Vsup) | 1.8 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | OTHER |
| Terminal Finish | TIN SILVER COPPER |
| Terminal Form | BALL |
| Terminal Pitch | 0.8 mm |
| Terminal Position | BOTTOM |
| Width | 11 mm |
| 会社名称 | Elpida Memory, Inc. |
|---|---|
| 設立 | 1999 |
| 資本金 | JPY 236.1 billion |
| 所在地 | 2-1, Yaesu 2-chome, Chuo-ku, Tokyo 104-0028 Japan |
| URL | http://www.elpida.com/ |
EDE2516ABSE5CE - ELPIDA の商品詳細ページです。