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型番 | EDE1108AEBG-6E-F |
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メーカー | ELPIDA |
Access Mode | MULTI BANK PAGE BURST |
Access Time-Max | 0.45 ns |
Additional Feature | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 333 MHz |
I/O Type | COMMON |
Interleaved Burst Length | 4,8 |
JESD-30 Code | R-PBGA-B60 |
Length | 11.5 mm |
Memory Density | 1073741824 bit |
Memory IC Type | DDR2 DRAM |
Memory Width | 8 |
Number of Functions | 1 |
Number of Ports | 1 |
Number of Terminals | 60 |
Number of Words | 134217728 words |
Number of Words Code | 128M |
Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Min | 0 Cel |
Organization | 128MX8 |
Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY |
Package Code | TFBGA |
Package Equivalence Code | BGA60,9X11,32 |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY Meter |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Power Supplies | 1.8 V |
Qualification Status | Not Qualified |
Refresh Cycles | 8192 |
Seated Height-Max | 1.2 mm |
Self Refresh | YES |
Sequential Burst Length | 4,8 |
Sub Category | DRAMs |
Supply Current-Max | 0.275 mA |
Supply Voltage-Max (Vsup) | 1.9 V |
Supply Voltage-Min (Vsup) | 1.7 V |
Supply Voltage-Nom (Vsup) | 1.8 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | OTHER |
Terminal Form | BALL |
Terminal Pitch | 0.8 mm |
Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Width | 8 mm |
会社名称 | Elpida Memory, Inc. |
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設立 | 1999 |
資本金 | JPY 236.1 billion |
所在地 | 2-1, Yaesu 2-chome, Chuo-ku, Tokyo 104-0028 Japan |
URL | http://www.elpida.com/ |
EDE1108AEBG-6E-F - ELPIDA の商品詳細ページです。