ZXMN7A11GTA Diodes

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ZXMN7A11GTA の詳細情報

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型番ZXMN7A11GTA
メーカーDIODES
Additional Feature LOW THRESHOLD; FAST SWITCHING
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 70 V
Drain Current-Max (ID) 3.8 A
Drain-source On Resistance-Max 0.13 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Diodes Incorporated
所在地4949 Hedgcoxe Road, Suite 200 Plano, TX 75024 United States
URLhttp://www.diodes.com/

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