LMN400B01-7 データシート Diodes

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LMN400B01-7 の詳細情報

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型番LMN400B01-7
メーカーDIODES
データシートProduct_list_pdf
Additional Feature BUILT IN BIAS RESISTOR
Collector Current-Max (IC) 0.4 A
Configuration SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR
DC Current Gain-Min (hFE) 70
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.115 A
Drain-source On Resistance-Max 2 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
VCEsat-Max 0.3 V
会社名称Diodes Incorporated
所在地4949 Hedgcoxe Road, Suite 200 Plano, TX 75024 United States
URLhttp://www.diodes.com/

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