DMT10H015LFG-13 Diodes

DMT10H015LFG-13 - DIODES の商品詳細ページです。

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DMT10H015LFG-13 の詳細情報

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型番DMT10H015LFG-13
メーカーDIODES
Avalanche Energy Rating (Eas) 85 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.0235 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6.9 pF
JESD-30 Code S-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 35 W
Pulsed Drain Current-Max (IDM) 75 A
Reference Standard MIL-STD-202
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Diodes Incorporated
所在地4949 Hedgcoxe Road, Suite 200 Plano, TX 75024 United States
URLhttp://www.diodes.com/

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