DMT10H010LSS-13 Diodes

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DMT10H010LSS-13 の詳細情報

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型番DMT10H010LSS-13
メーカーDIODES
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 61.5 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 11.5 A
Drain-source On Resistance-Max 0.0095 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 75 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Diodes Incorporated
所在地4949 Hedgcoxe Road, Suite 200 Plano, TX 75024 United States
URLhttp://www.diodes.com/

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