DMG6601LVT-7 Diodes

DMG6601LVT-7 - DIODES の商品詳細ページです。

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DMG6601LVT-7 の詳細情報

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型番DMG6601LVT-7
メーカーDIODES
Additional Feature HIGH RELIABILITY
Configuration N and P-Channel
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.8 A
Drain-source On Resistance-Max 0.055 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Diodes Incorporated
所在地4949 Hedgcoxe Road, Suite 200 Plano, TX 75024 United States
URLhttp://www.diodes.com/

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