1N4006-A Diodes

1N4006-A - DIODES の商品詳細ページです。

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1N4006-A の詳細情報

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型番1N4006-A
メーカーDIODES
Additional Feature FORMED LEAD OPTIONS ARE AVAILABLE
Application GENERAL PURPOSE
Breakdown Voltage-Min 800 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 0.8 V
JEDEC-95 Code DO-41
JESD-30 Code O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 125 Cel
Operating Temperature-Min -65 Cel
Output Current-Max 1 A
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM Meter
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Reference Standard AEC-Q101; IATF 16949
Rep Pk Reverse Voltage-Max 800 V
Reverse Current-Max 5 uA
Reverse Recovery Time-Max 2 us
Reverse Test Voltage 800 V
Sub Category Rectifier Diodes
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) 5
会社名称Diodes Incorporated
所在地4949 Hedgcoxe Road, Suite 200 Plano, TX 75024 United States
URLhttp://www.diodes.com/

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