型番 | S29GL512S10TFA010 |
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メーカー | CYPRESS |
Access Time-Max | 100 ns |
Additional Feature | 20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES |
Alternate Memory Width | 1 |
Boot Block | BOTTOM/TOP |
Command User Interface | YES |
Common Flash Interface | YES |
Data Polling | YES |
Data Retention Time-Min | 2 |
Endurance | 100000 Write/Erase Cycles |
JESD-30 Code | R-PDSO-G56 |
JESD-609 Code | e3 |
Length | 18.4 mm |
Memory Density | 536870912 bit |
Memory IC Type | FLASH |
Memory Width | 8 |
Moisture Sensitivity Level | 3 |
Number of Functions | 1 |
Number of Sectors/Size | 512 |
Number of Terminals | 56 |
Number of Words | 67108864 words |
Number of Words Code | 64M |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Min | -40 Cel |
Organization | 64MX8 |
Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY |
Package Code | TSSOP |
Package Equivalence Code | TSSOP56,.8,20 |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter |
Page Size | 32 words |
Parallel/Serial | PARALLEL |
Programming Voltage | 3 V |
Ready/Busy | YES |
Screening Level | AEC-Q100 |
Seated Height-Max | 1.2 mm |
Sector Size | 128K Words |
Standby Current-Max | 0.0001 Amp |
Supply Current-Max | 0.08 mA |
Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 2.7 V |
Supply Voltage-Nom (Vsup) | 3 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | INDUSTRIAL |
Terminal Finish | MATTE TIN |
Terminal Form | GULL WING |
Terminal Pitch | 0.5 mm |
Terminal Position | DUAL |
会社名称 | Cypress Semiconductor Corporation. |
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所在地 | 198 Champion Court San Jose, CA 95134 USA |
URL | http://www.cypress.com/ |
S29GL512S10TFA010 - CYPRESS の商品詳細ページです。