| 型番 | S29GL01GS10TFA010 |
|---|
| メーカー | CYPRESS |
| Access Time-Max |
100 ns |
| Additional Feature |
20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES |
| Alternate Memory Width |
1 |
| Boot Block |
BOTTOM/TOP |
| Command User Interface |
YES |
| Common Flash Interface |
YES |
| Data Polling |
YES |
| Data Retention Time-Min |
2 |
| Endurance |
100000 Write/Erase Cycles |
| JESD-30 Code |
R-PDSO-G56 |
| JESD-609 Code |
e3 |
| Length |
18.4 mm |
| Memory Density |
1073741824 bit |
| Memory IC Type |
FLASH |
| Memory Width |
8 |
| Moisture Sensitivity Level |
3 |
| Number of Functions |
1 |
| Number of Sectors/Size |
1K |
| Number of Terminals |
56 |
| Number of Words |
134217728 words |
| Number of Words Code |
128M |
| Operating Mode |
ASYNCHRONOUS |
| Operating Temperature-Max |
85 Cel |
| Operating Temperature-Min |
-40 Cel |
| Organization |
128MX8 |
| Output Characteristics |
3-STATE |
| Package Body Material |
PLASTIC/EPOXY |
| Package Code |
TSSOP |
| Package Equivalence Code |
TSSOP56,.8,20 |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter |
| Page Size |
32 words |
| Parallel/Serial |
PARALLEL |
| Programming Voltage |
3 V |
| Ready/Busy |
YES |
| Screening Level |
AEC-Q100 |
| Seated Height-Max |
1.2 mm |
| Sector Size |
128K Words |
| Standby Current-Max |
0.0001 Amp |
| Supply Current-Max |
0.08 mA |
| Supply Voltage-Max (Vsup) |
3.6 V |
| Supply Voltage-Min (Vsup) |
2.7 V |
| Supply Voltage-Nom (Vsup) |
3 V |
| Surface Mount |
YES |
| Technology |
CMOS |
| Terminal Finish |
MATTE TIN |
| Terminal Form |
GULL WING |
| Terminal Pitch |
0.5 mm |
| Terminal Position |
DUAL |
| Type |
NAND TYPE |
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