型番 | S25FL256SAGBHI200 |
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メーカー | CYPRESS |
Additional Feature | ALSO CONFIGURABLE AS 128M X 1 |
Alternate Memory Width | 2 |
Boot Block | BOTTOM |
Clock Frequency-Max (fCLK) | 133 MHz |
Data Retention Time-Min | 20 |
Endurance | 100000 Write/Erase Cycles |
JESD-30 Code | R-PBGA-B24 |
JESD-609 Code | e1 |
Length | 8 mm |
Memory Density | 268435456 bit |
Memory IC Type | FLASH |
Memory Width | 4 |
Moisture Sensitivity Level | 3 |
Number of Functions | 1 |
Number of Terminals | 24 |
Number of Words | 67108864 words |
Number of Words Code | 64M |
Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Min | -40 Cel |
Organization | 64MX4 |
Package Body Material | PLASTIC/EPOXY |
Package Code | TBGA |
Package Equivalence Code | BGA24,5X5,40 |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, THIN PROFILE Meter |
Parallel/Serial | SERIAL |
Power Supplies | 3/3.3 V |
Programming Voltage | 3 V |
Qualification Status | Not Qualified |
Seated Height-Max | 1.2 mm |
Serial Bus Type | SPI |
Standby Current-Max | 0.0001 Amp |
Sub Category | Flash Memories |
Supply Current-Max | 0.1 mA |
Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 2.7 V |
Supply Voltage-Nom (Vsup) | 3 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | INDUSTRIAL |
Terminal Finish | TIN SILVER COPPER |
Terminal Form | BALL |
Terminal Pitch | 1 mm |
Terminal Position | BOTTOM |
Type | NOR TYPE |
Width | 6 mm |
Write Cycle Time-Max (tWC) | 500 ms |
Write Protection | HARDWARE/SOFTWARE |
会社名称 | Cypress Semiconductor Corporation. |
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所在地 | 198 Champion Court San Jose, CA 95134 USA |
URL | http://www.cypress.com/ |
S25FL256SAGBHI200 - CYPRESS の商品詳細ページです。