型番 | FM21L16-60-TG |
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メーカー | CYPRESS |
Access Time-Max | 110 ns |
Access Time-Max (ns) | 110 |
Additional Feature | DATA RETENTION TIME @ 85 DEGREE CENTIGRADE |
DLA Qualification | Not Qualified |
Data Retention Time-Min | 10 |
Endurance | 1.0E+14 Write/Erase Cycles |
Endurance (Write/Erase Cycles) | 1.0E+14 |
J-STD-609 Code | e4 |
JESD-30 Code | R-PDSO-G44 |
JESD-609 Code | e4 |
Length | 18.41 mm |
Length (mm) | 18.41 |
Memory Density | 2097152 bit |
Memory Density (bits) | 2097152 |
Memory IC Type | FRAM |
Memory Organization | 128KX16 |
Memory Width | 16 |
Moisture Sensitivity Level | 3 |
Number of Functions | 1 |
Number of Terminals | 44 |
Number of Words | 131072 words |
Number of Words (words) | 131072 |
Number of Words Code | 128K |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Max (Cel) | 85 |
Operating Temperature-Min (Cel) | -40 |
Package Body Material | PLASTIC/EPOXY |
Package Code | TSOP2 |
Package Equivalence Code | TSOP44,.46,32 |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE Meter |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Cel) | 260 |
Seated Height-Max (mm) | 1.2 |
Standby Current-Max (A) | 0.00027 |
Standby Voltage-Min (V) | 2.7 |
Sub Category | SRAMs |
Supply Current-Max (mA) | 12 |
Supply Voltage-Max (V) | 3.6 |
Supply Voltage-Min (V) | 2.7 |
Supply Voltage-Nom (V) | 3.3 |
Surface Mount | YES |
Technology | CMOS |
Terminal Finish | MATTE TIN |
Terminal Form | GULL WING |
Terminal Pitch (mm) | 0.8 |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 10 |
Width (mm) | 10.16 |
会社名称 | Cypress Semiconductor Corporation. |
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所在地 | 198 Champion Court San Jose, CA 95134 USA |
URL | http://www.cypress.com/ |
FM21L16-60-TG - CYPRESS の商品詳細ページです。