型番 | CY7C1012DV33-10BGXIT |
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メーカー | CYPRESS |
データシート | ![]() |
Access Time-Max | 10 ns |
I/O Type | COMMON |
JESD-30 Code | R-PBGA-B119 |
JESD-609 Code | e1 |
Length | 22 mm |
Memory Density | 12582912 bit |
Memory IC Type | STANDARD SRAM |
Memory Width | 24 |
Moisture Sensitivity Level | 3 |
Number of Functions | 1 |
Number of Terminals | 119 |
Number of Words | 524288 words |
Number of Words Code | 512K |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Min | -40 Cel |
Organization | 512KX24 |
Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY |
Package Code | HBGA |
Package Equivalence Code | BGA119,7X17,50 |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, HEAT SINK/SLUG Meter |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Cel) | 260 |
Power Supplies | 3.3 V |
Qualification Status | Not Qualified |
Seated Height-Max | 2.4 mm |
Standby Current-Max | 0.025 Amp |
Standby Voltage-Min | 2 V |
Sub Category | SRAMs |
Supply Current-Max | 0.175 mA |
Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 3 V |
Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | INDUSTRIAL |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal Form | BALL |
Terminal Pitch | 1.27 mm |
Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | 20 |
Width | 14 mm |
会社名称 | Cypress Semiconductor Corporation. |
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所在地 | 198 Champion Court San Jose, CA 95134 USA |
URL | http://www.cypress.com/ |
CY7C1012DV33-10BGXIT - CYPRESS の商品詳細ページです。