AP4435GM Apec

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AP4435GM の詳細情報

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型番AP4435GM
メーカーAPEC
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain-source On Resistance-Max 0.02 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 50 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Advanced Power Electronics Corp.
設立1988
所在地12F-1 & 2, No.5, Taiyuan 1st ST., Zhubei City, Hsinchu County, 30265, Taiwan, R.O.C.
URLhttp://www.a-power.com.tw/index.aspx?lang=eng&fn=index

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