AP2305AGN Apec

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AP2305AGN の詳細情報

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型番AP2305AGN
メーカーAPEC
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3.2 A
Drain-source On Resistance-Max 0.06 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Advanced Power Electronics Corp.
設立1988
所在地12F-1 & 2, No.5, Taiyuan 1st ST., Zhubei City, Hsinchu County, 30265, Taiwan, R.O.C.
URLhttp://www.a-power.com.tw/index.aspx?lang=eng&fn=index

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