| 型番 | AS4C512M16D3L-12BIN |
|---|---|
| メーカー | ALLIANCE |
| Access Mode | MULTI BANK PAGE BURST |
| Access Time-Max | 0.225 ns |
| Additional Feature | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY |
| Clock Frequency-Max (fCLK) | 800 MHz |
| I/O Type | COMMON |
| Interleaved Burst Length | 4,8 |
| JESD-30 Code | R-PBGA-B96 |
| JESD-609 Code | e1 |
| Length | 14 mm |
| Memory Density | 8589934592 bit |
| Memory IC Type | DDR3L DRAM |
| Memory Width | 16 |
| Moisture Sensitivity Level | 3 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 96 |
| Number of Words | 536870912 words |
| Number of Words Code | 512M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -40 Cel |
| Organization | 512MX16 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | TFBGA |
| Package Equivalence Code | BGA96,9X16,32 |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH Meter |
| Power Supplies | 1.35 V |
| Qualification Status | Not Qualified |
| Refresh Cycles | 8192 |
| Seated Height-Max | 1.2 mm |
| Self Refresh | YES |
| Sequential Burst Length | 4,8 |
| Standby Current-Max | 0.011 Amp |
| Standby Voltage-Min | 1.283 V |
| Sub Category | DRAMs |
| Supply Current-Max | 0.185 mA |
| Supply Voltage-Max (Vsup) | 1.45 V |
| Supply Voltage-Min (Vsup) | 1.283 V |
| Supply Voltage-Nom (Vsup) | 1.35 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | TIN SILVER COPPER |
| Terminal Form | BALL |
| Terminal Pitch | 0.8 mm |
| Terminal Position | BOTTOM |
| Width | 9 mm |
| 会社名称 | Alliance Semiconductor |
|---|---|
| 設立 | 2005 |
| 所在地 | 4633 Old Ironsides Dr, #240 Santa Clara , CA 95054 United States |
| URL | http://www.alsc.com/ |
AS4C512M16D3L-12BIN - ALLIANCE の商品詳細ページです。