| 型番 | AS4C16M16D1-5TIN |
|---|---|
| メーカー | ALLIANCE |
| データシート | ![]() |
| Access Mode | FOUR BANK PAGE BURST |
| Access Time-Max | 0.7 ns |
| Additional Feature | AUTO/SELF REFRESH |
| Clock Frequency-Max (fCLK) | 200 MHz |
| I/O Type | COMMON |
| Interleaved Burst Length | 2,4,8 |
| JESD-30 Code | R-PDSO-G66 |
| JESD-609 Code | e3/e6 |
| Length | 22.22 mm |
| Memory Density | 268435456 bit |
| Memory IC Type | SYNCHRONOUS DRAM |
| Memory Width | 16 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 66 |
| Number of Words | 16777216 words |
| Number of Words Code | 16M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -40 Cel |
| Organization | 16MX16 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | TSOP2 |
| Package Equivalence Code | TSSOP66,.46 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE Meter |
| Peak Reflow Temperature (Cel) | 260 |
| Power Supplies | 2.5 V |
| Qualification Status | Not Qualified |
| Refresh Cycles | 8192 |
| Seated Height-Max | 1.2 mm |
| Self Refresh | YES |
| Sequential Burst Length | 2,4,8 |
| Sub Category | DRAMs |
| Supply Voltage-Max (Vsup) | 2.7 V |
| Supply Voltage-Min (Vsup) | 2.3 V |
| Supply Voltage-Nom (Vsup) | 2.5 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | PURE MATTE TIN/TIN BISMUTH |
| Terminal Form | GULL WING |
| Terminal Pitch | 0.65 mm |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Width | 10.16 mm |
| 会社名称 | Alliance Semiconductor |
|---|---|
| 設立 | 2005 |
| 所在地 | 4633 Old Ironsides Dr, #240 Santa Clara , CA 95054 United States |
| URL | http://www.alsc.com/ |
AS4C16M16D1-5TIN - ALLIANCE の商品詳細ページです。